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Freescale Semiconductor
RF Product Device Data
MRF9120LR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(2)
(VDS
= 26 Vdc, I
D
= 1000 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain-Source On-Voltage
(1)
(VGS
= 10 Vdc, I
D
= 1.3 Adc)
VDS(on)
—
0.17
0.4
Vdc
Dynamic Characteristics (1,3)
Output Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
—
50
—
pF
Reverse Transfer Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
—
2
—
pF
Each side of device measured separately.
Measurement made with device in push-pull configuration.
Part internally input matched.
(continued)
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